Characteristics of p-channel SOI LDMOS Transistor with Tapered Field Oxides

Simulation of Ldmos High Frequency Power Transistor

Two important properties of an RF LDMOS power transistor are the high-voltage performance and the high-frequency performance. This thesis begins with the design of an initial device model based on a Motorola RF LDMOS product. The effects of varying drift length, n-epi layer doping concentration and thickness are then investigated by simulation using Academi2d software. Each parameter is varied ...

Novel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

Improved drain current characteristics of tunnel field effect transistor with heterodielectric stacked structure

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...

A Novel Body-tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a stro...